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| BZM55C... Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features D D D D D D D D D Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55C... / TZMC... Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances 96 12315 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions RthJA x300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65...+175 Unit mW mA C C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction ambient mounted on epoxy-glass hard tissue, Fig. 1 Junction tie point 35mm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA RthJL Value 500 300 Unit K/W K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V Document Number 85598 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 1 (6) BZM55C... Vishay Telefunken Type BZM55C... 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) t /T p 2) at T = j VZnom IZT for VZT and rzjT V mA V 1) W 2.4 5 2.28 to 2.56 < 85 2.7 5 2.5 to 2.9 < 85 3.0 5 2.8 to 3.2 < 90 3.3 5 3.1 to 3.5 < 90 3.6 5 3.4 to 3.8 < 90 3.9 5 3.7 to 4.1 < 90 4.3 5 4.0 to 4.6 < 90 4.7 5 4.4 to 5.0 < 80 5.1 5 4.8 to 5.4 < 60 5.6 5 5.2 to 6.0 < 40 6.2 5 5.8 to 6.6 < 10 6.8 5 6.4 to 7.2 <8 7.5 5 7.0 to 7.9 <7 8.2 5 7.7 to 8.7 <7 9.1 5 8.5 to 9.6 < 10 10 5 9.4 to 10.6 < 15 11 5 10.4 to 11.6 < 20 12 5 11.4 to 12.7 < 20 13 5 12.4 to 14.1 < 26 15 5 13.8 to 15.6 < 30 16 5 15.3 to 17.1 < 40 18 5 16.8 to 19.1 < 50 20 5 18.8 to 21.2 < 55 22 5 20.8 to 23.3 < 55 24 5 22.8 to 25.6 < 80 27 5 25.1 to 28.9 < 80 30 5 28 to 32 < 80 33 5 31 to 35 < 80 36 5 34 to 38 < 80 39 2.5 37 to 41 < 90 43 2.5 40 to 46 < 90 47 2.5 44 to 50 < 110 51 2.5 48 to 54 < 125 56 2.5 52 to 60 < 135 62 2.5 58 to 66 < 150 68 2.5 64 to 72 < 200 75 2.5 70 to 79 < 250 rzjk at W < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 550 < 450 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 220 < 220 < 220 < 220 < 500 < 600 < 700 < 700 < 1000 < 1000 < 1000 < 1500 IZK IR and IR at VR mA mA mA 2) V 1 < 100 < 50 1 1 < 10 < 50 1 1 <4 < 40 1 1 <2 < 40 1 1 <2 < 40 1 1 <2 < 40 1 1 <1 < 20 1 1 < 0.5 < 10 1 1 < 0.1 <2 1 1 < 0.1 <2 1 1 < 0.1 <2 2 1 < 0.1 <2 3 1 < 0.1 <2 5 1 < 0.1 <2 6.2 1 < 0.1 <2 6.8 1 < 0.1 <2 7.5 1 < 0.1 <2 8.2 1 < 0.1 <2 9.1 1 < 0.1 <2 10 1 < 0.1 <2 11 1 < 0.1 <2 12 1 < 0.1 <2 13 1 < 0.1 <2 15 1 < 0.1 <2 16 1 < 0.1 <2 18 1 < 0.1 <2 20 1 < 0.1 <2 22 1 < 0.1 <2 24 1 < 0.1 <2 27 1 < 0.1 <5 30 0.5 < 0.1 <5 33 0.5 < 0.1 <5 36 0.5 < 0.1 < 10 39 0.5 < 0.1 < 10 43 0.5 < 0.1 < 10 47 0.5 < 0.1 < 10 51 0.5 < 0.1 < 10 56 TKVZ %/K -0.09 to -0.06 -0.09 to -0.06 -0.08 to -0.05 -0.08 to -0.05 -0.08 to -0.05 -0.08 to -0.05 -0.06 to -0.03 -0.05 to +0.02 -0.02 to +0.02 -0.05 to +0,05 0.03 to 0.06 0.03 to 0.07 0.03 to 0.07 0.03 to 0.08 0.03 to 0.09 0.03 to 0.1 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 x 100ms, tighter tolerances available on request. 150C www.vishay.de * FaxBack +1-408-970-5600 2 (6) Document Number 85598 Rev. 3, 01-Apr-99 BZM55C... Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) 600 Ptot - Total Power Dissipation ( mW ) 500 400 300 200 100 0 0 95 9602 1.3 VZtn - Relative Voltage Change VZtn=VZt/VZ(25C) 1.2 TKVZ=10 10-4/K 8 6 10-4/K 10-4/K 10-4/K 10-4/K 1.1 4 2 1.0 0.9 0.8 -60 0 -2 10-4/K -4 10-4/K 40 80 120 160 200 95 9599 0 60 120 180 240 Tamb - Ambient Temperature ( C ) Tj - Junction Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature 1000 - Voltage Change ( mV ) Figure 3. Typical Change of Working Voltage vs. Junction Temperature TK VZ - Temperature Coefficient of VZ ( 10 -4 /K ) 15 Tj = 25C 100 10 5 IZ=5mA 0 IZ=5mA 10 DVZ 1 0 95 9598 -5 0 10 20 30 40 50 VZ - Z-Voltage ( V ) 5 10 15 20 25 VZ - Z-Voltage ( V ) 95 9600 Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25C Figure 4. Temperature Coefficient of Vz vs. Z-Voltage 200 C D - Diode Capacitance ( pF ) 150 VR = 2V 100 Tj = 25C 50 0 0 95 9601 5 10 15 20 25 VZ - Z-Voltage ( V ) Figure 5. Diode Capacitance vs. Z-Voltage Document Number 85598 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 3 (6) BZM55C... Vishay Telefunken 100 IF - Forward Current ( mA ) 50 Ptot=500mW Tamb=25C Tj = 25C 1 IZ - Z-Current ( mA ) 1.0 95 9607 10 40 30 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 20 10 0 15 20 25 30 35 95 9605 VF - Forward Voltage ( V ) VZ - Z-Voltage ( V ) Figure 6. Forward Current vs. Forward Voltage 1000 r Z - Differential Z-Resistance ( W ) 100 Figure 8. Z-Current vs. Z-Voltage IZ - Z-Current ( mA ) 80 Ptot=500mW Tamb=25C 60 IZ=1mA 100 5mA 10 10mA 40 20 0 0 4 8 12 16 20 1 0 95 9606 Tj = 25C 5 10 15 20 25 VZ - Z-Voltage ( V ) 95 9604 VZ - Z-Voltage ( V ) Figure 9. Differential Z-Resistance vs. Z-Voltage Figure 7. Z-Current vs. Z-Voltage Z thp - Thermal Resistance for Pulse Cond. (K/W) 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse 10 tp/T=0.1 tp/T=0.05 1 10-1 tp/T=0.02 iZM=(-VZ+(VZ2+4rzj tp/T=0.01 DT=Tjmax-Tamb RthJA=300K/W DT/Zthp)1/2)/(2rzj) 100 101 tp - Pulse Length ( ms ) 102 95 9603 Figure 10. Thermal Response www.vishay.de * FaxBack +1-408-970-5600 4 (6) Document Number 85598 Rev. 3, 01-Apr-99 BZM55C... Vishay Telefunken 0.71 1.3 1.27 95 10330 Reflow Soldering 1.2 0.152 9.9 25 0.355 0.6 1.2 2.4 0.6 Figure 12. Recommended foot pads (in mm) 10 Wave Soldering 95 10331 2.5 24 1.4 95 10329 0.7 1.4 2.8 0.7 Figure 11. Board for RthJA definition (in mm) Figure 13. Recommended foot pads (in mm) Dimensions in mm 96 12072 Document Number 85598 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 5 (6) BZM55C... Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 6 (6) Document Number 85598 Rev. 3, 01-Apr-99 |
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